NESG260234 nec's npn sige rf transistor for medium output power amplification (1 w) 3-pin power minimold (34 package) california eastern laboratories ? this product is suitable for medium output power (1 w) amplification p o = 30 dbm typ. @ v ce = 6 v, p in = 15 dbm, f = 460 mhz p o = 30 dbm typ. @ v ce = 6 v, p in = 20 dbm, f = 900 mhz ? maximum stable gain: msg = 23 db typ @ v ce = 6 v, i c = 100 ma, f = 460 mhz ? sige technology: uhs2-hv process ? absolute maximum ratings: v cbo = 25 v ? 3-pin power minimold (34 package) features ordering information remark to order evaluation samples, contact your nearby sales of?ce. unit sample quantity is 25 pcs. absolute maximum ratings (t a =+25oc) note mounted on 34.2 cm 2 0.8 mm (t) glass epoxy pwb caution observe precautions when handling because these devices are sensitive to electrostatic discharge. part number order number package quantity supplying form NESG260234 NESG260234-az 3-pin power minimold (pb-free) note1 25 pcs (non reel) ? magazine case NESG260234-t1 NESG260234-t1-az 1 kpcs/reel ? 12 mm wide embossed taping ? pin 2 (emitter) face the perforation side of the tape notes 1. contains lead in the part except the electrode terminals. parameter symbol ratings unit collector to base voltage v cbo 25 v collector to emitter voltage v ceo 9.2 v emitter to base voltage v ebo 2.8 v collector current i c 600 ma total power dissipation p tot note 1.9 w junction temperature t j 150 c storage temperature t stg ? 65 to +150 c
NESG260234 NESG260234 thermal resistance (t a = 25c) parameter symbol ratings unit thermal resistance from junction to ambient note rth j-a 65 c/w note mounted on 34.2 cm 2 0.8 mm (t) glass epoxy pwb recommended operating range (t a = 25c) parameter symbol min. typ. max. unit collector to emitter voltage v ce ? 6.0 7.2 v collector current i c ? 400 500 ma input power note p in ? 15 20 dbm note input power under conditions of v ce 6.0 v, f = 460 mhz
notes 1. pulse measurement: pw 350 s, duty cycle 2% h fe classification NESG260234 NESG260234 electrical charachteristics (t a = 25c) rank fb marking sp h fe value 80 to 180 parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 9.2 v, i e = 0 ma ? ? 1 a emitter cut-off current i ebo v eb = 1.0 v, i c = 0 ma ? ? 1 a dc current gain h fe note v ce = 3 v, i c = 100 ma 80 120 180 ? rf characteristics linear gain (1) g l v ce = 6 v, i c (set) = 30 ma (rf off), f = 460 mhz, p in = 0 dbm 19 22 ? db linear gain (2) g l v ce = 6 v, i c (set) = 30 ma (rf off), f = 900 mhz, p in = 0 dbm ? 19 ? db output power (1) po v ce = 6 v, i c (set) = 30 ma (rf off), f = 460 mhz, p in = 15 dbm 28.5 30.0 ? dbm output power (2) po v ce = 6 v, i c (set) = 30 ma (rf off), f = 900 mhz, p in = 20 dbm ? 30.0 ? dbm collector ef?ciency (1) c v ce = 6 v, i c (set) = 30 ma (rf off), f = 460 mhz, p in = 15 dbm ? 50 ? % collector ef?ciency (2) c v ce = 6 v, i c (set) = 30 ma (rf off), f = 900 mhz, p in = 20 dbm ? 60 ? %
3-pin power minimold (34 package) (unit:mm) life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury . the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. a business partner of nec compound semiconductor devices, ltd. 12/22/2004 pin connections 1. collector 2. emitter 3. base 1.50.1 0.41 +0.03 -0.0 6 4.50.1 0.420.06 0.420.06 1.60.2 3.0 1.5 2 1 3 2.50.1 4.00.25 0.8 min. 0.470.06 NESG260234
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